isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.5A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 620 V, 0.95 廓 typ., 5.5 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220, IPAK packages

文件：1.05244 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N沟道620 V、0.95 Ohm、5.5 A SuperMESH3(TM) 功率MOSFET，IPAK封装

This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the m • 100% avalanche tested \n• Extremely high dv/dt capability \n• Very low intrinsic capacitance \n• Improved diode reverse recovery characteristics \n• Zener-protected;

ST

意法半导体

N-channel 620 V, 0.95 廓 typ., 5.5 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220, IPAK packages

文件：1.05244 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Very low intrinsic capacitance

文件：1.06712 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N-channel 620 V, 1.1 廓, 5.5 A, IPAK, DPAK, TO-220,TO-220FP SuperMESH3??Power MOSFET

文件：433.29 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体