N-channel 100 V, 0.22 廓, 6 A, DPAK, IPAK low gate charge STripFET??Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for telecom a

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STMICROELECTRONICS

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N-Channel 100-V (D-S) MOSFET

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VBSEMI

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N-Channel MOSFET uses advanced trench technology

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DOINGTER

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N沟道100 V、0.22 Ω、6 A、DPAK/IPAK封装低栅极电荷STripFET™功率MOSFET

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applicat • Exceptional dv/dt capabilitY \n• 100% avalanche tested;

ST

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