isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.95Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.43 Kbytes 页数：2 Pages

ISC

无锡固电

Extremely low gate charge

文件：1.20522 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

N沟道600 V、0.86 Ohm典型值、5 A MDmesh M2功率MOSFET，IPAK封装

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

N-Channel 650V (D-S) Power MOSFET

文件：1.10573 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

Extremely low gate charge

文件：1.20522 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.95Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.05 Kbytes 页数：2 Pages

ISC

无锡固电