PMH550UPE

Marking：0001；Package：SOT8001；20 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN0606-3 (SOT8001)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •Veryfastswitching •TrenchMOSFETte

PMH600UNE

Marking：0001；Package：SOT8001；20 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN0606-3 (SOT8001)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •Veryfastswitching •TrenchMOSFETte

PMH850UPE

Marking：00011001；Package：SOT8001；30 V, P-channel Trench MOSFET

description P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN0606-3 (SOT8001)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Featuresandbenefits •Lowthresholdvoltage •Veryfastswitching •TrenchMOSFETtechnology •

PMH950UPE

Marking：0001；Package：SOT8001；20 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN0606-3 (SOT8001)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •Veryfastswitching •TrenchMOSFETte

PMZB290UNE

Marking：0000；Package：SOT883B；20 V, single N-channel Trench MOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 1.2Featuresandbenefits Veryfastswitching Lowthresholdvoltage TrenchMOSFE

PMZB670UPE

Marking：0000；Package：SOT883B；20 V, single P-channel Trench MOSFET

1.1Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 1.2Featuresandbenefits Veryfastswitching Lowthresholdvoltage TrenchMOSFE

TC35680FSG

Marking：002X680FSG；Package：P-VQFN40-0505-0.40-005；TC35680FSG-002/TC35681FSG-002 Bluetooth® Low Energy IC

1.2.Features Wirelesscommunicationfunction CompliantwithBluetooth®LowEnergyVer.5.0specification. Built-inBluetooth®basebandcircuit Built-inBluetooth®RFcircuit Maximumoutputpower:+8dBm MaximumRXsensitivity:-105.0dBm(incaseofCodedPHYandS=8) RSSIa

TC35681FSG

Marking：002X681FSG；Package：P-VQFN40-0505-0.40-005；TC35680FSG-002/TC35681FSG-002 Bluetooth® Low Energy IC

1.2.Features Wirelesscommunicationfunction CompliantwithBluetooth®LowEnergyVer.5.0specification. Built-inBluetooth®basebandcircuit Built-inBluetooth®RFcircuit Maximumoutputpower:+8dBm MaximumRXsensitivity:-105.0dBm(incaseofCodedPHYandS=8) RSSIa

TPS2000EDGKR

Marking：000E；Package：VSSOP；TPS20xxE Current-Limited, Power-Distribution Switches

1Features •Singlepowerswitchfamily •Pin-to-pinwithexistingTISwitchPortfolio •Ratedcurrentsof1.5Aand2A •Supports3.3-Vand5-Vpowerrail •±20accurate,fixed,constantcurrentlimit •Fastovercurrentresponse:2μs •Deglitchedfaultreporting •Outputdischarge •Re

TPS2001EDGKR

Marking：001E；Package：VSSOP；TPS20xxE Current-Limited, Power-Distribution Switches

1Features •Singlepowerswitchfamily •Pin-to-pinwithexistingTISwitchPortfolio •Ratedcurrentsof1.5Aand2A •Supports3.3-Vand5-Vpowerrail •±20%accurate,fixed,constantcurrentlimit •Fastovercurrentresponse:2μs •Deglitchedfaultreporting •Outputdischarge