N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA622TT is a switching device which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 4.0 V dri

文件：149.14 Kbytes 页数：7 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING FEATURES • 4.0 V drive available • Low on-state resistance RDS(on)1 = 82 mΩ MAX. (VGS = 10 V, ID = 1.5 A) RDS(on)2 = 120 mΩ MAX. (VGS = 4.5 V, ID = 1.0 A) RDS(on)3 = 139 mΩ MAX. (VGS = 4.0 V, ID = 1.0 A)

文件：366.91 Kbytes 页数：9 Pages

RENESAS

瑞萨

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA622TT is a switching device which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 4.0 V dri

文件：149.14 Kbytes 页数：7 Pages

NEC

瑞萨

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA622TT is a switching device which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 4.0 V dri

文件：149.14 Kbytes 页数：7 Pages

NEC

瑞萨

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Renesas

瑞萨