P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA650TT is a switching device, which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 1.8 V dr

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NEC

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MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING FEATURES • 1.8 V drive available • Low on-state resistance RDS(on)1 = 50 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A) RDS(on)2 = 68 mΩ MAX. (VGS = −2.5 V, ID = −2.5 A) RDS(on)3 = 114 mΩ MAX. (VGS = −1.8 V, ID = −1.5 A)

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RENESAS

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P-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices - Cellular Phone - DSC - Portable Game Console - MP3 - GPS

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VBSEMI

微碧半导体

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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