NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：207.42 Kbytes 页数：3 Pages

CEL

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：486.37 Kbytes 页数：2 Pages

CEL

Package：6-TSSOP，SC-88，SOT-363；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS 2 NPN 12V 4.5GHZ SOT363

CEL

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • High gain: |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • Fla

文件：53.62 Kbytes 页数：12 Pages

NEC

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NPN SILICON RF TWIN TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ´ 2SC5006) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead 6-pin thin-type ultra super

文件：194.51 Kbytes 页数：14 Pages

RENESAS

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NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION The UPA810TF contains two NE856 NPN high frequency silicon bipolar chips. NECs new low profile TF package is ideal for all portable wireless applicatons where reducing compo nent height is a prime consideration. Each transistor chip is independently mounted and easily configured for

文件：15.4 Kbytes 页数：1 Pages

NEC

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