NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：207.42 Kbytes 页数：3 Pages

CEL

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：486.37 Kbytes 页数：2 Pages

CEL

Package：6-TSSOP，SC-88，SOT-363；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS 2 NPN 12V 4.5GHZ SOT363

CEL

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • High gain: |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • Fla

文件：53.62 Kbytes 页数：12 Pages

NEC

瑞萨

DOUBLE CHANNEL HIGH SIDE DRIVER

DESCRIPTION The VND810MSP is a monolithic device designed in STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. ■ CMOS COMPATIBLE INPUTS ■ OPEN DRAIN STATUS OUTPUTS ■ ON STATE OPEN LOAD DETECTION ■ OFF STATE OPEN LOAD DETECTION

文件：264.01 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

DOUBLE CHANNEL HIGH SIDE DRIVER

DESCRIPTION The VND810SP is a monolithic device made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. ■ CMOS COMPATIBLE INPUTS ■ OPEN DRAIN STATUS OUTPUTS ■ ON STATE OPEN LOAD DETECTION ■ OFF STATE OPEN LOAD DETECTIO

文件：263.8 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体