TIP142NPN

SILICON PLANAR DARLINGTON POWER TRANSISTORS

DesignedforGeneralPurposeAmplifierandLowFrequencySwitchingApplications TO-3PNNonIsolated PlasticPackage

TIP142T

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlowspeedswitchingapplications. 10AMPEREDARLINGTIOONCOM:EMEMTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP140T,TIP141T,TIP142T-->NPN TIP145T,TIP146T,TIP147T--->PNP

TIP142T

Monolithic Construction With Built In Base- Emitter Shunt Resistors

Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse •ComplementtoTIP145T/146T/147T

TIP142T

Monolithic Construction With Built In Base-Emitter Shunt Resistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors -HighDCCurrentGain:hFE=1000@VCE=2V,IC=5A(Min.) -Collector-EmitterSustainingVoltage -LowCollector-EmitterSaturationVoltage -IndustrialUse -ComplementarytoTIP145/146/147

TIP142T

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layoutandmonolithicDarlingtonconfiguration.Theresultingtransistorsshowexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■MonolithicDarlingtonconfiguration ■

TIP142T

SILICON PLANAR POWER DARLINGTON TRANSISTORS

SILICONPLANARPOWERDARLINGTONTRANSISTORS ForuseinPowerLinearandSwitchingApplications

TIP142T

isc Silicon NPN Darlington Power Transistor

DESCRIPTION •HighDCCurrentGain- :hFE=1000(Min)@IC=5A •Collector-EmitterSustainingVoltage- :VCEO(SUS)=100V(Min) •ComplementtoTypeTIP147T APPLICATIONS •Designedforgeneralpurposeamplifierandlowspeed switchingapplications.

TIP142T

Silicon NPN Darlington Power Transistor

Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,lc=5A(Min.) •IndustrialUse •ComplementtoTIP145T/146T/147T

TIP142T

NPN Epitaxial Silicon Darlington Transistor

Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,lc=5A(Min.) •IndustrialUse •ComplementtoTIP145T/146T/147T

TIP142T

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions SiliconNPNtransistorinaTO-220PlasticPackage. Features Monolithicconstructionwithbuiltinbase-emittershuntresistors,HighDCcurrentgaincomplementtoTIP147T. Applications Linearandswitchingindustrialequipment.