零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
TIP2955 | Silicon PNP Power Transistors DESCRIPTION ·WithTO-3PNpackage ·ComplementtotypeTIP3055 ·90Wat25°Ccasetemperature ·15Acontinuouscollectorcurrent APPLICATIONS ·Designedforgeneral–purposeswitchingandamplifierapplications. | SAVANTIC Savantic, Inc. | ||
TIP2955 | Silicon PNP Power Transistors DESCRIPTION •WithTO-3PNpackage •ComplementtotypeTIP3055 •90Wat25°Ccasetemperature •15Acontinuouscollectorcurrent APPLICATIONS •Designedforgeneral–purpose switchingandamplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
TIP2955 | Complementary Silicon High Power Ttransistors PNPTIP2955 NPNTIP3055 DESCRIPTION TheTIP3055isasiliconEpitaxial-BasePlanarNPNtransistormountendinTO-247plasticpackage.Itisintentedforpowerswitchingcircuits,seriesandshuntregulators,outputstagesandhi-fiamplifiers. ThecomplementaryPNPtypeistheTIP295 | TGS Tiger Electronic Co.,Ltd | ||
TIP2955 | SILICON POWER TRANSISTORS PNPTIP2955 NPNTIP3055 TheTIP3055isaNPNepitaxial-basetransistorinTO3PNpackage.Itisintendedforpowerswitchingcircuits,seriesandshuntregulators,outputstageandhi-fiamplifiers.ThecomplementaryistheTIP2955ForPNPtypesVoltageandCurentareNegative.Complianceto | COMSET Comset Semiconductor | ||
TIP2955 | Complementary Silicon Power Transistors 15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,90WATTS •DCCurrentGain−hFE=20-70@IC=4.0Adc •Collector−EmitterSaturationVoltage−VCE(sat)=1.1Vdc(Max)@IC=4.0Adc •ExcellentSafeOperatingArea •ThesearePb−FreeDevices* | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
TIP2955 | Complementary Silicon Power Transistors 15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,90WATTS •DCCurrentGain−hFE=20-70@IC=4.0Adc •Collector−EmitterSaturationVoltage−VCE(sat)=1.1Vdc(Max)@IC=4.0Adc •ExcellentSafeOperatingArea •ThesearePb−FreeDevices* | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
TIP2955 | Silicon PNP Power Transistor DESCRIPTION •ExcellentSafeOperatingArea •DCCurrentGain-:hFE=20-70@lc=-4A •Collector-EmitterSaturationVoltage-:VCE(sat)=-1.1V(Max)@lc=-4A •ComplementtoTypeTIP3055 APPLICATIONS •Designedforgeneral-purposeswitchingandamplifierapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
TIP2955 | POWER TRANSISTORS(15A,60V,90W) 15AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS90WATTS ..designedforuseintgeneral-purposeamplifierandswitchingapplication NPN->TIP3055 PNP->TIP2955 | MOSPEC MOSPEC | ||
TIP2955 | PNP SILICON POWER TRANSISTOR •DesignedforComplementaryUsewiththeTIP3055Series •90Wat25°CCaseTemperature •15AContinuousCollectorCurrent •Customer-SpecifiedSelectionsAvailable | POINNPower Innovations Ltd Power Innovations Ltd | ||
TIP2955 | POWER TRANSISTORS COMPLEMENTARY SILICON 15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,90WATTS •DCCurrentGain−hFE=20-70@IC=4.0Adc •Collector−EmitterSaturationVoltage−VCE(sat)=1.1Vdc(Max)@IC=4.0Adc •ExcellentSafeOperatingArea •ThesearePb−FreeDevices* | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
TIP2955 | COMPLEMENTARY SILICON POWER TRANSISTORS NPN-->TIP3055 PNP-->TIP2955 Description Thedevicesaremanufacturedinepitaxial-baseplanartechnologyandaresuitableforaudio,powerlinearandswitchingapplications. Features ■Lowcollector-emittersaturationvoltage ■ComplementaryNPN-PNPtransistors Applications ■Gen | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
TIP2955 | POWER TRANSISTORS COMPLEMENTARY SILICON TIP2955PNP TIP3055NPN 15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS90WATTS ...designedforgeneral–purposeswitchingandamplifierapplications. •DCCurrentGain—hFE=20–70@IC=4.0Adc •Collector–EmitterSaturationVoltage—VCE(sat)=1.1Vdc(Max)@ | MotorolaMotorola, Inc 摩托罗拉 | ||
TIP2955 | PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) AudioPowerAmplifier DCtoDCConverter *HighCurrentCapability *HighPowerDissipation *ComplematarytoTIP3055 | WINGSWing Shing Computer Components Wing Shing Computer Components | ||
TIP2955 | Complementary power transistors | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
TIP2955 | 包装:散装 封装/外壳:TO-218-3 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS PNP 100V 15A TO218 | CentralCentral Semiconductor Corp 美国中央半导体 | ||
TIP2955 | 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:TO-247-3 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS PNP 60V 15A TO247-3 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
TO-3P Fully Isolated Plastic Package Transistor CDIL TO-3PFullyIsolatedPlasticPackageTransistorCDIL | CDIL CDIL | |||
Complementary Silicon Power Transistors 15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,90WATTS •DCCurrentGain−hFE=20-70@IC=4.0Adc •Collector−EmitterSaturationVoltage−VCE(sat)=1.1Vdc(Max)@IC=4.0Adc •ExcellentSafeOperatingArea •ThesearePb−FreeDevices* | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
TO-3P Fully Isolated Plastic Package Transistor CDIL TO-3PFullyIsolatedPlasticPackageTransistorCDIL | CDIL CDIL | |||
Complementary power transistors | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Si-PNP
- 性质:
低频或音频放大 (LF)_开关管 (S)_功率放大 (L
- 封装形式:
直插封装
- 极限工作电压:
100V
- 最大电流允许值:
15A
- 最大工作频率:
<1MHZ或未知
- 引脚数:
3
- 可代换的型号:
BD246C,BD250C,3CK108D,
- 最大耗散功率:
90W
- 放大倍数:
- 图片代号:
B-71
- vtest:
100
- htest:
999900
- atest:
15
- wtest:
90
产品属性
- 产品编号:
TIP2955
- 制造商:
Central Semiconductor Corp
- 类别:
分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个
- 包装:
散装
- 晶体管类型:
PNP
- 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):
20 @ 4A,4V
- 频率 - 跃迁:
3MHz
- 安装类型:
通孔
- 封装/外壳:
TO-218-3
- 供应商器件封装:
TO-218
- 描述:
TRANS PNP 100V 15A TO218
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST(意法半导体) |
23+ |
TO-247 |
928 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
ST |
23+/24+ |
TO-3P |
42505 |
原装现货,支持终端,价格美丽!!! |
询价 | ||
华晶 |
TO-220AB |
80000000 |
2013 |
询价 | |||
ST |
15+ |
TO247 |
12500 |
原装进口现货,假一罚十 |
询价 | ||
ST |
20+ |
TO-3P |
9986 |
询价 | |||
ST |
14+无铅 |
TO-3P |
25700 |
优势产品,博盛微热卖!!! |
询价 | ||
STM |
21+ |
TO-247-3 |
7200 |
原装正品 有挂有货 |
询价 | ||
ST/意法 |
22+ |
TO-218 |
43 |
只做原装进口 免费送样!! |
询价 | ||
STM |
21+/22+ |
7200 |
TO-247-3 |
询价 | |||
ST(意法半导体) |
22+ |
?TO-247 |
10000 |
只做原装现货 假一赔万 |
询价 |