TIP140

SILICON PLANAR DARLINGTON POWER TRANSISTORS

DesignedforGeneralPurposeAmplifierandLowFrequencySwitchingApplications TO-3PNNonIsolated PlasticPackage

TIP140

NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS

NPNSILICONDARLINGTONS,SILICONPOWERTRANSISTORS Theyaresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationandare mountedinTO-3PNplasticpacktage. Theyareintendedforuseinpowerlinearandswitchingapplication. ThecomplementaryareTIP145,TIP146,TIP14

TIP140F

Monolithic Construction With Built In Base- Emitter Shunt Resistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •ComplementtoTIP145F/146F/147F •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse

TIP140F

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3PFullyIsolatedPlasticPackageTransistorCDIL

TIP140F

SILICON PLANAR DARLINGTON POWER TRANSISTORS

SILICONPLANARDARLINGTONPOWERTRANSISTORS ForuseinPowerLinearandSwitchingApplications

TIP140NPN

SILICON PLANAR DARLINGTON POWER TRANSISTORS

DesignedforGeneralPurposeAmplifierandLowFrequencySwitchingApplications TO-3PNNonIsolated PlasticPackage

TIP140T

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlowspeedswitchingapplications. 10AMPEREDARLINGTIOONCOM:EMEMTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP140T,TIP141T,TIP142T-->NPN TIP145T,TIP146T,TIP147T--->PNP

TIP140T

Monolithic Construction With Built In Base-Emitter Shunt Resistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors -HighDCCurrentGain:hFE=1000@VCE=2V,IC=5A(Min.) -Collector-EmitterSustainingVoltage -LowCollector-EmitterSaturationVoltage -IndustrialUse -ComplementarytoTIP145/146/147

TIP140T

Monolithic Construction With Built In Base- Emitter Shunt Resistors

Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse •ComplementtoTIP145T/146T/147T

TIP140T

isc Silicon NPN Darlington Power Transistor

DESCRIPTION •HighDCCurrentGain-:hFE=1000(Min)@IC=5A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=60V(Min) •ComplementtoTypeTIP145T APPLICATIONS •Designedforgeneralpurposeamplifierandlowspeedswitchingapplications.