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TIP140T

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP

文件:204.61 Kbytes 页数:4 Pages

MOSPEC

统懋

TIP140T

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 1000(Min)@ IC= 5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) • Complement to Type TIP145T APPLICATIONS • Designed for general purpose amplifier and low speed switching applications.

文件:149.48 Kbytes 页数:2 Pages

ISC

无锡固电

TIP140T

NPN Epitaxial Silicon Darlington Transistor

Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, lc = 5A (Min.) • Industrial Use • Complement to TIP145T/146T/147T

文件:69.96 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TIP140T

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= 2V, IC= 5A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP145/146/147

文件:571.15 Kbytes 页数:5 Pages

SEMIHOW

TIP140T

Monolithic Construction With Built In Base- Emitter Shunt Resistors

Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use • Complement to TIP145T/146T/147T

文件:52.75 Kbytes 页数:4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

TIP140T_09

NPN Epitaxial Silicon Darlington Transistor

文件:314.92 Kbytes 页数:5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

TIP140T_11

Monolithic Construction With Built In Base-Emitter Shunt Resistors

文件:574.33 Kbytes 页数:5 Pages

TAI-SAW

嘉硕科技

TIP140T

BJT

SemiHow

TIP140TU

Package:TO-220-3;包装:管件 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN DARL 60V 10A TO220-3

ONSEMI

安森美半导体

详细参数

  • 型号:

    TIP140T

  • 功能描述:

    达林顿晶体管

  • RoHS:

  • 制造商:

    Texas Instruments

  • 配置:

    Octal

  • 晶体管极性:

    NPN 集电极—发射极最大电压

  • VCEO:

    50 V 发射极 - 基极电压

  • VEBO:

    集电极—基极电压

  • 最大直流电集电极电流:

    0.5 A

  • 最大工作温度:

    + 150 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    SOIC-18

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
24+
TO-220
10000
全新
询价
ST
17+
TO-220
6200
询价
ST
20+
TO-220
38560
原装优势主营型号-可开原型号增税票
询价
FAGOR
23+
TO220AB
69820
终端可以免费供样,支持BOM配单!
询价
ST/意法
2022+
TO-220
12888
原厂代理 终端免费提供样品
询价
原厂
2023+
模块
600
专营模块,继电器,公司原装现货
询价
ST/意法
22+
TO-220
97817
询价
ST
25+
TO-TO-220
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
ST
24+
TO-220
7560
郑重承诺只做原装进口现货
询价
ST
25+
TO-220
16900
原装,请咨询
询价
更多TIP140T供应商 更新时间2025-10-4 16:01:00