POWER TRANSISTORS COMPLEMENTARY SILICON

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS • DC Current Gain − hFE = 20-70 @ IC= 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC= 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices*

文件：101.21 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Complementary Silicon Power Transistors

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS • DC Current Gain − hFE = 20-70 @ IC= 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC= 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices*

文件：114.97 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

POWER TRANSISTORS(15A,60V,90W)

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 90 WATTS ..designed for use int general-purpose amplifier and switching application NPN -> TIP3055 PNP -> TIP2955

文件：107.34 Kbytes 页数：3 Pages

MOSPEC

统懋

POWER TRANSISTORS COMPLEMENTARY SILICON

TIP2955 PNP TIP3055 NPN 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 90 WATTS . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20–70 @ IC = 4.0 Adc • Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @

文件：104.43 Kbytes 页数：4 Pages

Motorola

摩托罗拉

Complementary Power Transistor

Description: Complementary Silicon Power Transistors are designed for use in general purpose power amplifier and switching applications. Features: • Power Dissipation-PD = 90W at TC = 25°C • • DC Current Gain hFE = 20 ~ 100 at IC = 4A • • VCE(sat) = 1.1V (Max.) at IC = 4A, IB = 400mA

文件：478.87 Kbytes 页数：4 Pages

MULTICOMP

易络盟

SILICON POWER TRANSISTORS

PNP TIP2955 NPN TIP3055 The TIP3055 is a NPN epitaxial-base transistor in TO3PN package.It is intended for power switching circuits, series and shunt regulators, output stage and hi-fi amplifiers. The complementary is the TIP2955 For PNP types Voltage and Curent are Negative. Compliance to

文件：72.47 Kbytes 页数：3 Pages

COMSET

Silicon NPN Power Transistors

DESCRIPTION • Excellent Safe Operating Area • DC Current Gain- : hFE=20-70@IC = 4A • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A • Complement to Type TIP2955 APPLICATIONS • Designed for general-purpose switching and amplifier applications.

文件：155.45 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • DC Current Gain- : hFE=20-70@IC = 4A • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A • Complement to Type TIP2955 APPLICATIONS • Designed for general-purpose switching and amplifier applications.

文件：95.71 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON POWER TRANSISTOR

● Designed for Complementary Use with the TIP2955 Series ● 90 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available Collector-base voltage (IE = 0) VCBO 100 V Collector-emitter voltage (IB = 0) (see Note 1) VCER 70 V Emitter-base voltage VEB

文件：95.38 Kbytes 页数：6 Pages

POINN

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type TIP2955 ·90 W at 25°C case temperature ·15 A continuous collector current APPLICATIONS ·Designed for general–purpose switching and amplifier applications.

文件：155.4 Kbytes 页数：4 Pages

SAVANTIC