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BR806

SiliconBridgeRectifiers8Ampsto10Amps

SiliconBridgeRectifiers8Ampsto10Amps TheplasticmaterialcarriesU/Lrecognition94V-O

EDAL

Edal Industries, Inc.

BR806G

GLASSPASSIVATEDBRIDGERECTIFIERS

FEATURES ●Surgeoverloadrating-175amperespeak ●Lowforwardvoltagedrop ●Smallsize;simpleinstallation ●Sliverplatedcopperleads ●Mountingposition:Any

Good-Ark

Good-Ark

BR806G

GLASSPASSIVATEDBRIDGERECTIFIERS

HYyueqing hongyi electronics co.,ltd

宏一乐清市宏一电子有限公司

BR806G

GLASSPASSIVATEDBRIDGERECTIFIERS

REVERSEVOLTAGE-50to1000VoltsFORWARDCURRENT-8.0Amperes FEATURES ●Surgeoverloadrating-175amperespeak ●Lowforwardvoltagedrop ●Smallsize;simpleinstallation ●Sliverplatedcopperleads ●Mountingposition:Any

HYyueqing hongyi electronics co.,ltd

宏一乐清市宏一电子有限公司

BR806G

GLASSPASSIVATEDBRIDGERECTIFIERS

HYyueqing hongyi electronics co.,ltd

宏一乐清市宏一电子有限公司

BR806G

GlassPassivatedBridgeRectifiers

HYyueqing hongyi electronics co.,ltd

宏一乐清市宏一电子有限公司

BS806B

TouchKey

TheBS801B/02B/04B/06B/08Barearangeof1to8keytouchkeydeviceswhichcandetecthumanbodycontactusingexternaltouchpads.Thehighlevelofdeviceintegrationenableapplicationstobeimplementedwithaminimumnumberofexternalcomponents. *Operatingvoltage:2.2V~5.5V *Ultra

HoltekHolmate Technology Corp. (Holtek)

合泰

BS806C

TouchKey

GeneralDescription TheBS801C/02C/04C/06C/08Carearangeof1to8keytouchkeydeviceswhichcandetecthumanbodycontactusingexternaltouchpads.Thehighlevelofdeviceintegrationenableapplicationstobeimplementedwithaminimumnumberofexternalcomponents. Features Op

HoltekHolmate Technology Corp. (Holtek)

合泰

BSL806N

OptiMOS??Small-Signal-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BSS806N

OptiMOS??Small-Signal-Transistor

Features •N-channel •Enhancementmode •UltraLogiclevel(1.8Vrated) •Avalancherated •QualifiedaccordingtoAECQ101 •100lead-free;RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BSS806N

OptiMOS2Small-Signal-Transistor

Features •N-channel •Enhancementmode •UltraLogiclevel(1.8Vrated) •Avalancherated •QualifiedaccordingtoAECQ101 •100lead-free;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

TYSEMITaiwan TY Semiconductor Co. , Ltd.

台湾TY半导体台湾TY半导体有限公司

BSS806N

OptiMOS??Small-Signal-Transistor

Features •N-channel •Enhancementmode •UltraLogiclevel(1.8Vrated) •Avalancherated •QualifiedaccordingtoAECQ101 •100lead-free;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

ZPSEMI

ZP Semiconductor

BSS806NE

OptiMOS??Small-Signal-Transistor

Features •N-channel •Enhancementmode •UltraLogiclevel(1.8Vrated) •ESDprotected •Avalancherated •QualifiedaccordingtoAECQ101 •100lead-free;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BU806

SiliconNPNDarlingtonPowerTransistor

DESCRIPTION •HighVoltage:VCEV=400V(Min) •LowSaturationVoltage- :VCE(sat)=1.5V(Max)@IC=5A APPLICATIONS •DesignedforuseinhorizontaldeflectioncircuitsinTV’sand CRT’s.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

BU806

NPNSILICONDARLINGTONTRANSISTORv

CentralCentral Semiconductor Corp

美国中央半导体

BU806

NPNDarlingtonPowerTransistor

ThisDarlingtontransistorisahighvoltage,highspeeddeviceforuseinhorizontaldeflectioncircuitsinTV’sandCRT’s. •HighVoltage: VCEV=330or400V •FastSwitchingSpeed: tc=1.0µs(max) •LowSaturationVoltage: VCE(sat)=1.5V(max) •PackagedinJEDECTO–220AB

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BU806

SILICONDARLINGTONPOWERTRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS TheyaresiliconepitaxialplanarNPNpowertransistorsinDarlingtonconfigurationmountedin aTO-220plasticpackage. Theyarehighvoltage,highcurrentdevicesforfastswitchingapplications. CompliancetoRoHS.

COMSET

Comset Semiconductor

BU806

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc2未分类制造商

BU806

FASTSWITCHINGDARLINGTONTRANSISTORS

DESCRIPTION TheBUB806/807andBUBO6FI/807F!aresilicon epitaxialplanarNPNpowertransistorsinDar- lingtonconfigurationwithintegratedbase-emitter speed-updiode,mountedrespectivelyinTO-220 plasticpackageandISOWATT220fullyisolated package.Theyarehighvoltage,highcurrent

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BU806

MEDIUMVoltage&FastSwitchingDarlingtonTransistor

DESCRIPTION ThedevicesaresiliconEpitaxialPlanarNPNpowertransistorsinDarlingtonconfigurationwithintegratedbase-emitterspeed-updiode,mountedinTO-220plasticpackage. Theycanbeusedinhorizontaloutputstagesof110oCRTvideodisplays.

TGS

Tiger Electronic Co.,Ltd

供应商型号品牌批号封装库存备注价格
ANY
177
全新原装 货期两周
询价
TI
2023+
SMD8
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
N/A
24+
NA
5000
只做原装公司现货
询价
TERALOGIC
BGA
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
TI
23+
NA
100
现货!就到京北通宇商城
询价
SMD8
1
自己现货
询价
TI/TEXAS
23+
SOP14P
8931
询价
TI
00+
SOP14P
50
原装现货海量库存欢迎咨询
询价
ITE
2023+
SOP-16
5800
进口原装,现货热卖
询价
TI/德州仪器
21+
PLCC28
23000
只做正品原装现货
询价
更多TI806供应商 更新时间2024-6-1 16:06:00