零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
TIP112 | POWER TRANSISTORS(2.0A,60-100V,50W)
| MOSPEC MOSPEC | ||
TIP112 | DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
| MotorolaMotorola, Inc 摩托罗拉 | ||
TIP112 | NPN SILICON POWER DARLINGTONS NPNSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewith TIP115,TIP116andTIP117 ●50Wat25°CCaseTemperature ●4AContinuousCollectorCurrent ●MinimumhFEof500at4V,2A | POINNPower Innovations Ltd Power Innovations Ltd | ||
TIP112 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION TheTIP110andTIP112aresiliconEpitaxial-BaseNPNtransistorsinmonolithicDarlingtonconfigurationmountedinJedecTO-220plasticpackage.Theyareintentedforuseinmediumpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareTIP115andTIP117. ■STMicroe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
TIP112 | PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
| bocaBoca semiconductor corporation 博卡博卡半导体公司 | ||
TIP112 | Monolithic Construction With Built In Base- Emitter Shunt Resistors MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •ComplementarytoTIP115/116/117 •HighDCCurrentGain:hFE=1000@VCE=4V,IC=1A(Min.) •LowCollector-EmitterSaturationVoltage •IndustrialUse | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
TIP112 | EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) MONOLITHICCONSTRUCTIONWITHBUILTIN BASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE. FEATURES •HighDCCurrentGain. :hFE=1000(Min.),ᷤVCE=4V,IC=1A. •LowCollector-EmitterSaturationVoltage. •ComplementarytoTIP117. | KECKEC CORPORATION KEC株式会社 | ||
TIP112 | NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR DESCRIPTION TheUTCTIP112isdesignedforsuchapplicationsas:DC/DCconverterssupplylineswitching,batterycharger,LCDbacklighting,peripheraldrivers,Driverinlowsupplyvoltageapplications(e.g.lampsandLEDs)andinductiveloaddriver(e.g.relays,buzzersandmotors). FEATURES * | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | ||
TIP112 | PLASTIC POWER TRANSISTORS PLASTICPOWERTRANSISTORS IntendedforuseinMediumPowerLinearandSwitchingApplications TO-220PlasticPackage | TEL TRANSYS Electronics Limited | ||
TIP112 | TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designedforuseingeneralpurposeamplifierandlow-speedswitchingapplications. | DCCOMDc Components 直流元件直流元件有限公司 | ||
TIP112 | Plastic Medium-Power Complementary Silicon Transistors PlasticMedium-PowerComplementarySiliconTransistors Designedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain− hFE=2500(Typ)@IC =1.0Adc •Collector−EmitterSustainingVoltage−@30mAdc VCEO(sus)=60Vdc(Min) | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
TIP112 | Silicon NPN Darlington Power Transistors DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage •ComplementtotypeTIP115/116/117 APPLICATIONS •Forindustrialuse | SAVANTIC Savantic, Inc. | ||
TIP112 | Darlington Power Transistors (NPN) DarlingtonPowerTransistors(NPN) Features •Designedforgeneral-purposeamplifierandlowspeed switchingapplications •RoHSCompliant | TAITRON TAITRON | ||
TIP112 | Silicon NPN Darlington Power Transistor Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •ThecomplementaryPNPtypesaretheTIP115/116/117respectively •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •Mois | MCCMicro Commercial Components 美微科美微科半导体公司 | ||
TIP112 | Silicon NPN Darlington Power Transistors DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage •ComplementtotypeTIP115/116/117 APPLICATIONS •Forindustrialuse | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
TIP112 | DARLINGTON TRANSISTOR (NPN) FEATURES ●HighDCCurrentGain:hFE=1000@VCE=4V,IC=1A(Min.) ●LowCollector-EmitterSaturationVoltage ●IndustrialUse | FS First Silicon Co., Ltd | ||
TIP112 | SILICON DARLINGTON POWER TRANSISTORS SILICONDARLINGTONPOWERTRANSISTORS NPNepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe. Theyaredesignedforgeneralpurposeamplifierandlow-speedswitchingapplications. PNPcomplementsareTIP115-116-117 CompliancetoRoHS. | COMSET Comset Semiconductor | ||
TIP112 | Silicon NPN transistor in a TO-220 Plastic Package. Descriptions SiliconNPNtransistorinaTO-220PlasticPackage. Features ComplementtoTIP117. Applications Mediumpowerlinearswitchingapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | ||
TIP112 | DARLINGTON TRANSISTOR (NPN) TO-220-3LPlastic-EncapsulateTransistors FEATURES ●HighDCCurrentGain:hFE=1000@VCE=4V,IC=1A(Min.) ●LowCollector-EmitterSaturationVoltage ●IndustrialUse | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | ||
TIP112 | Silicon Power darlington Complementary transistors
| CentralCentral Semiconductor Corp 美国中央半导体 |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Si-N+Darl+Di
- 性质:
低频或音频放大 (LF)_开关管 (S)_功率放大 (L
- 封装形式:
直插封装
- 极限工作电压:
100V
- 最大电流允许值:
4A
- 最大工作频率:
<1MHZ或未知
- 引脚数:
3
- 可代换的型号:
BD265B,BD701,BDW23C,BDW53C,BDW63C,
- 最大耗散功率:
50W
- 放大倍数:
β>1000
- 图片代号:
B-10
- vtest:
100
- htest:
999900
- atest:
4
- wtest:
50
产品属性
- 产品编号:
TIP112
- 制造商:
onsemi
- 类别:
分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个
- 包装:
管件
- 晶体管类型:
NPN - 达林顿
- 不同 Ib、Ic 时 Vce 饱和压降(最大值):
2.5V @ 8mA,2A
- 电流 - 集电极截止(最大值):
2mA
- 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):
1000 @ 1A,4V
- 工作温度:
150°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-220-3
- 供应商器件封装:
TO-220-3
- 描述:
TRANS NPN DARL 100V 2A TO220-3
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST(意法半导体) |
23+ |
TO-220 |
942 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
ST/意法 |
23+ |
TO-220 |
2000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
SAMSUNG/三星 |
22+ |
TO-220 |
5000 |
只做原装进口 免费送样!! |
询价 | ||
ST/意法 |
21+19+ |
TO-220 |
8279 |
只做原装正品 |
询价 | ||
SMG |
06+ |
原厂原装 |
13451 |
只做全新原装真实现货供应 |
询价 | ||
ST |
23+ |
TO220 |
9526 |
询价 | |||
STM |
13+ |
TO-220AB |
400 |
原装正品现货供 |
询价 | ||
FAIRCHILD |
1604+ |
TO220 |
2158 |
低价支持实单,可送样品! |
询价 | ||
TO-220 |
10000 |
全新 |
询价 | ||||
ST/进口原 |
17+ |
TO-220 |
6200 |
询价 |