isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=50A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.035Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：351.23 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.027 Ω ■ AVALANCHERUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURREN

文件：94.57 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

ST

意法半导体

N-channel TO-220 MOSFET

文件：746.9 Kbytes 页数：5 Pages

SEMIPOWER

芯派科技

N-Channel MOSFET uses advanced SGT technology

文件：862.04 Kbytes 页数：4 Pages

DOINGTER

杜因特

N-Ch MOSFET

文件：628.35 Kbytes 页数：6 Pages

WIINSOK

微硕半导体