isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=5.4A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：351.56 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL 800V - 1.8ohm - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR

N - CHANNEL 800V - 1.8Ω - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 1.8 Ω ■ AVALANCE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ VERY HIGH CURRENT CAPABILITY ■ APPLICATION ORIENTED CHARACTERIZATION APPLICAT

文件：138.86 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 800V - 1.8ohm - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR

N - CHANNEL 800V - 1.8Ω - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 1.8 Ω ■ AVALANCE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ VERY HIGH CURRENT CAPABILITY ■ APPLICATION ORIENTED CHARACTERIZATION APPLICAT

文件：138.86 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

TYPICAL RDS(on) = 1.68 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD ■ THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX ”-1”) ■ SURFACE-M

文件：126.04 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 800V - 1.8ohm - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR

N - CHANNEL 800V - 1.8Ω - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 1.8 Ω ■ AVALANCE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ VERY HIGH CURRENT CAPABILITY ■ APPLICATION ORIENTED CHARACTERIZATION APPLICAT

文件：138.86 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体