N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsur passed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as request e

文件：243.81 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerMESH™III MOSFET

ST

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.2A@ TC=25℃ ·Drain Source Voltage -VDSS= 900V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：351.93 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsur passed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as request e

文件：243.81 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体