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STW6NC90

N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateand source.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequeste

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STW6NC90Z

N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateand source.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequeste

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STW6NC90Z

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=5.2A@TC=25℃ ·DrainSourceVoltage-VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STB6NC90Z

N-CHANNEL900V-1.55ohm-5.4ATO-220/FP/D짼PAK/I짼PAKZener-ProtectedPowerMESH?줚IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedby

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP6NC90Z

N-CHANNEL900V-1.55ohm-5.4ATO-220/FP/D짼PAK/I짼PAKZener-ProtectedPowerMESH?줚IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedby

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP6NC90ZFP

N-CHANNEL900V-1.55ohm-5.4ATO-220/FP/D짼PAK/I짼PAKZener-ProtectedPowerMESH?줚IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedby

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

详细参数

  • 型号:

    STW6NC90

  • 制造商:

    STMICROELECTRONICS

  • 制造商全称:

    STMicroelectronics

  • 功能描述:

    N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerMESH⑩III MOSFET

供应商型号品牌批号封装库存备注价格
ST
23+
TO-247
8795
询价
ST/意法
23+
TO-247
50000
全新原装正品现货,支持订货
询价
ST
22+
247
6000
十年配单,只做原装
询价
ST/意法半导体
22+
TO-247
25000
只做原装进口现货,专注配单
询价
ST/意法
24+
NA/
3850
原厂直销,现货供应,账期支持!
询价
ST/意法半导体
22+
TO-247
25000
只做原装进口现货,专注配单
询价
ADI
23+
TO-247
8000
只做原装现货
询价
ST/意法
22+
TO-247
97339
询价
ST
25+
TO-247
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
ST/意法
24+
TO-247
60000
询价
更多STW6NC90供应商 更新时间2025-7-19 14:01:00