STW10NB60

N - CHANNEL 600V - 0.69ohm - 10A - TO-247 PowerMESH MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera

STW10NB60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

GB10NB60S

N-CHANNEL10A-600V-TO-220/TO-220FP/D2PAKPowerMESHTMIGBT

GF10NB60SD

N-channel10A-600V-TO-220FPPowerMESHTMIGBT

GP10NB60S

N-CHANNEL10A-600V-TO-220/TO-220FP/D2PAKPowerMESHTMIGBT

GP10NB60SD

N-CHANNEL10A-600V-TO-220LowDropPowerMESHTMIGBT

Description Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.ThesuffixSidentifiesafamilyoptimizedachieveminimumon-voltagedropforlowfrequencya

GP10NB60SFP

N-CHANNEL10A-600V-TO-220/TO-220FP/D2PAKPowerMESHTMIGBT

STGB10NB60S

N-CHANNEL10A-600V-TO-220/TO-220FP/D2PAKPowerMESHTMIGBT

STGF10NB60SD

N-channel10A-600V-TO-220FPPowerMESHTMIGBT

STGF10NB60SD

N-CHANNEL10A-600VTO-220FPPowerMESHIGBT