STW10NC60

N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?줚I MOSFET

DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=0.

STW10NC60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

GB10NC60HD

N-channel600V-10A-TO-220-D2PAK-TO-220FPveryfastPowerMESHIGBT

GB10NC60HD

N-channel600V-10A-TO-220-D2PAKVeryfastPowerMESHTMIGBT

GB10NC60K

N-channel600V-10A-D2PAK/TO-220/DPAKShortcircuitratedPowerMESHTMIGBT

GB10NC60KD

N-channel600V-10A-D2PAK/TO-220/TO-220FPShortcircuitratedPowerMESHIGBT

Description Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.Thesuffix“K”identifiesafamilyoptimizedforhighfrequencymotorcontrolapplicationswit

GB10NC60KD

N-channel600V-10A-D2PAK/TO-220/TO-220FPShortcircuitratedPowerMESHTMIGBT

GD10NC60H

N-channel10A-600V-DPAKVeryfastPowerMESH??IGBT

GD10NC60HD

600V-10A-veryfastIGBT

Description ThisIGBTutilizestheadvancedPowerMESH™ processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ■Lowon-voltagedrop(VCE(sat)) ■LowCRES/CIESratio(nocross-conduction susceptibility) ■Verysoftultrafastrecov

GD10NC60K

N-channel600V-10A-D2PAK/TO-220/DPAKShortcircuitratedPowerMESHTMIGBT