isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：351.9 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

文件：337.53 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Advanced planar process

文件：353.8 Kbytes 页数：6 Pages

TSC

台湾半导体

N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH TM IGBT

文件：453.39 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 600V - 10A - TO-220 - D2PAK - TO-220FP very fast PowerMESH IGBT

文件：410.77 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 600V - 10A - D2PAK / TO-220 / DPAK Short circuit rated PowerMESH TM IGBT

文件：599.36 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体