STW16NA60

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

■TYPICALRDS(on)=0.33Ω ■±30VGATETOSOURCEVOLTAGERANTING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWINTRINSICCAPACITANCE ■GATECHARGEMINIMIZED ■REDUCEDVOLTAGESPREAD APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPO

STW16NA60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=16A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.