Isc N-Channel MOSFET Transistor

文件：373.58 Kbytes 页数：2 Pages

ISC

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N-channel 650 V, 0.198 typ., 15 A MDmesh V Power MOSFET in TO-220FP, IPAK, TO-220 and TO-247 packages

文件：954.65 Kbytes 页数：19 Pages

STMICROELECTRONICS

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N沟道650 V、0.198 Ohm典型值、15 A MDmesh M5功率MOSFET，TO-247封装

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-ba • Worldwide best RDS(on) * area \n• Higher VDSSrating and high dv/dt capability \n• Excellent switching performance \n• 100% avalanche tested;

ST

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Isc N-Channel MOSFET Transistor

文件：289.17 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.198 廓 typ., 15 A MDmesh??V Power MOSFET in D짼PAK and DPAK packages

Description These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring hi

文件：1.02109 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.198 廓 typ., 15 A MDmesh??V Power MOSFET in D짼PAK and DPAK packages

Description These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring hi

文件：1.02109 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体