STW10NB60中文资料意法半导体数据手册PDF规格书
STW10NB60规格书详情
DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
■ TYPICAL RDS(on) = 0.69 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100 AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
■ HIGH CURRENT, HIGH SPEED SWITCHING
产品属性
- 型号：
STW10NB60
- 功能描述：
MOSFET N-CH 600V 10A
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
3000 |
询价 | ||||
ST |
24+ |
TO-3P |
1000 |
原装现货热卖 |
询价 | ||
ST/意法 |
22+ |
3P |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
ST |
22+ |
3P |
6000 |
十年配单,只做原装 |
询价 | ||
11+ |
28500 |
询价 | |||||
ST |
24+ |
TO-3P |
6430 |
原装现货/欢迎来电咨询 |
询价 | ||
ST |
2511 |
TO-3P |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
ST |
25+ |
TO-3P |
16900 |
原装，请咨询 |
询价 | ||
ST/意法 |
23+ |
TO-247 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
ST |
15+ |
TO-247 |
11560 |
全新原装,现货库存,长期供应 |
询价 |
