isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：352.13 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL 400V - 0.21ohm - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS

N - CHANNEL 400V - 0.21Ω - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS ■ TYPICAL RDS(on) = 0.21 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH M

文件：73.5 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 400V - 0.21ohm - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS

N - CHANNEL 400V - 0.21Ω - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS ■ TYPICAL RDS(on) = 0.21 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH M

文件：73.5 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 400V - 0.21ohm - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS

N - CHANNEL 400V - 0.21Ω - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS ■ TYPICAL RDS(on) = 0.21 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH M

文件：73.5 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体