isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.41Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：351.77 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600V - 0.35廓 - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET

文件：591.63 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

MOSFET N-CH 600V 10A TO-247

ST

意法半导体

N-Channel 650 V (D-S) MOSFET

文件：1.03295 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-channel 600V - 0.35廓 - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET

文件：591.63 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.41Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：345.38 Kbytes 页数：2 Pages

ISC

无锡固电