N-Channel Super Junction MOSFET Transistor

FEATURES · Drain Current -ID=12A@ TC=25℃ · Drain Source Voltage -VDSS=1200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.62Ω(TYP)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

Worldwide best FOM

文件：812.65 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

N沟道1200 V、0.62 Ohm典型值、12 A MDmesh K5功率MOSFET，TO-247封装

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Worldwide best FOM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

Worldwide best FOM

文件：812.65 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体