650 V, 30 A high surge silicon carbide power Schottky diode

Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge current capability • Operating Tj from -55 °C to 175 °C • ECOPACK2 compliant component

文件：659.24 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：PSC30G065L2Y；Package：HU3PAK；Automotive 650 V, 30 A high surge silicon carbide power Schottky diode

Features • AEC-Q101 qualified and PPAP capable • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • Operating Tj from -55 °C to 175 °C • SMD with top side cooling package (HU3PAK) • ECOPACK2 compliant com

文件：567.35 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：SPSC30G065WL；Package：DO-247；650 V, 30 A high surge silicon carbide power Schottky diode

Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge current capability • Operating Tj from -55 °C to 175 °C • ECOPACK2 compliant component

文件：659.24 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Automotive 650 V, 30 A high surge silicon carbide power Schottky diode

Features • AEC-Q101 qualified and PPAP capable • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge current capability • Operating Tj from -55 °C to 175 °C • ECOPACK2 compliant component

文件：661.56 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Automotive 650 V, 30 A high surge silicon carbide power Schottky diode

Features • AEC-Q101 qualified and PPAP capable • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge current capability • Operating Tj from -55 °C to 175 °C • ECOPACK2 compliant component

文件：661.56 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体