Automotive 650 V power Schottky silicon carbide diode

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patter AEC-Q101 qualified\nNo reverse recovery charge in application current range\nSwitching behavior independent of temperature\nRecommended to PFC applications\nPPAP capable\nECOPACK®2 compliantcomponent;

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丝印：PSC8H065Y；Package：DPAK；Automotive 650 V, 8 A high surge silicon carbide power Schottky diode

Features • AEC-Q101 qualified • No reverse recovery charge in application current range • Switching behavior independent of temperature • Recommended to PFC applications • PPAP capable • VRRM guaranteed from -40 to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with

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Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：AUTOMOTIVE 650 V POWER SCHOTTKY

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High forward surge capability

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High forward surge capability

文件：152.96 Kbytes 页数：8 Pages

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意法半导体

650 V power Schottky silicon carbide diode

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