Galvanically isolated 4 A single gate driver for SiC MOSFETs

The STGAP2SICSA is a single gate driver which provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry.\n\n The gate driver is characterized by 4 A capability and rail-to-rail outputs, making the device also suitable for mid and high power appl • AEC-Q100 qualified \n• High voltage rail up to 1200 V \n• Driver current capability: 4 A sink/source @25°C \n• 100 V/ns Common Mode Transient Immunity (CMTI) \n• Overall input-output propagation delay: 45 ns \n• Rail-to-rail outputs \n• 4 A Miller CLAMP dedicated pin \n• UVLO function• Gate drivin;

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意法半导体

Galvanically isolated 4 A single gate driver for SiC MOSFETs

The STGAP2SICSAN is a single gate driver which provides isolation between the gate driving channel and the low voltage control and interface circuitry.\n\n The gate driver is characterized by 4 A capability and rail-to-rail outputs, making the device also suitable for mid and high power applications • AEC-Q100 qualified \n• High voltage rail up to 1700 V \n• Driver current capability: 4 A sink/source @25°C \n• 100 V/ns Common Mode Transient Immunity (CMTI) \n• Overall input-output propagation delay: 45 ns \n• Rail-to-rail outputs \n• 4 A Miller CLAMP dedicated pin \n• UVLO function• Gate drivin;

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意法半导体

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SOIC-8

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上传：深圳市铭尔达科技有限公司

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TO-263

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上传：深圳市汇创佳电子科技有限公司

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TO-263

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上传：深圳市汇创佳电子科技有限公司