20 A, 600 V fast IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Very low on-voltage drop (VCE(sat)) ■ Minimum power losses at 5 kHz in hard switching ■ Optimized performance for medium

文件：423.41 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：GB19NC60S；Package：D2PAK；20 A, 600 V fast IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Very low on-voltage drop (VCE(sat)) ■ Minimum power losses at 5 kHz in hard switching ■ Optimized performance for medium

文件：423.41 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

19 A - 600 V - very fast IGBTE[

文件：524.83 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

19 A - 600 V - very fast IGBT

文件：724.64 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 600V - 9A - TO-220FP Very fast PowerMESH TM IGBT

文件：276.6 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体