Ultra low on-resistance

Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. • Extremely low gate charge • Ultra low on-resistance • Low gate input resistance A

文件：1.36681 Mbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

丝印：80N240K6；Package：DPAK；N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a DPAK package

Features • Worldwide best RDS(on) x area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100 avalanche tested • Zener-protected Applications • Flyback converter • Adapters for tablets, notebook and AIO • LED lighting

文件：355.45 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：80N340K6；Package：DPAK；N-channel 800 V, 285 mΩ typ., 12 A MDmesh K6 Power MOSFET in a DPAK package

Features • Worldwide best RDS(on) x area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100 avalanche tested • Zener-protected Applications • Flyback converter • Adapters for tablets, notebook and AIO • LED lighting Description This very high voltage N-channel Powe

文件：347.7 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：80N3LL；Package：DPAK；N-channel 30 V, 4 mΩ typ., 80 A Power MOSFET in a DPAK package

Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is an N-channel Power MOSFET with very low RDS(on) in all packages.

文件：778.69 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：80N450K6；Package：DPAK；N-channel 800 V, 380 mΩ typ., 10 A MDmesh K6 Power MOSFET in a DPAK package

Features • Worldwide best RDS(on) x area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100 avalanche tested • Zener-protected Applications • Flyback converter • Adapters for tablets, notebook and AIO • LED lighting Description This very high voltage N-channel Power MO

文件：348.37 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-Channel Enhancement Mode MOSFET

Application » Adaptor « Charger « Power management o SMPS Standby Power

文件：2.03279 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

SCHOTTKY RECTIFIER

 150 'C TJ operation  Center tap configuration  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MO

文件：1.04099 Mbytes 页数：7 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

Features  150 'C TJ operation  Center tap configuration  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability 

文件：380.56 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

Features  150'C TJ operation  Center tap configuration  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability 

文件：380.43 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

Complementary transistor pair in a single package

Description The STD815CP40 is a hybrid complementary pair of power bipolar transistors manufactured by using the high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. The STD815CP40 is housed in dual island DIP-8 package with separated terminals

文件：195.21 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体