STD8100中文资料桑德斯微电子数据手册PDF规格书

 150 'C TJ operation

 Center tap configuration

 Ultralow forward voltage drop

 High purity, high temperature epoxy encapsulation for

enhanced mechanical strength and moisture resistance

 High frequency operation

 Guard ring for enhanced ruggedness and long term reliability

 Trench MOS Schottky technology

 This is a Pb − Free Device

 All SMC parts are traceable to the wafer lot

 Additional testing can be offered upon request