STD7NM60N中文资料意法半导体数据手册PDF规格书
STD7NM60N规格书详情
描述 Description
These devices are N-channel Power MOSFETs realized using the second generation of MDmeshTM technology. It applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics.
特性 Features
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
产品属性
- 型号:
STD7NM60N
- 功能描述:
MOSFET N-channel 600 V5 A 0.84 Ohm DPAK
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
23+ |
原盒原包装 |
33000 |
全新原装假一赔十 |
询价 | ||
ST/意法 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
ST/意法 |
25+ |
TO-252 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
ST/意法 |
25+ |
TO252-3 |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
ST |
2018+ |
26976 |
代理原装现货/特价热卖! |
询价 | |||
ST/意法半导体 |
23+ |
TO-252-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法 |
22+ |
TO-252 |
12500 |
原装正品支持实单 |
询价 | ||
STM |
1930+ |
TO252 |
606 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST |
2511 |
TO-252 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
ST |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 |