isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.45Ω(Max)@VGS= 10V DESCRIPTION · SMPS · High Speed Switching

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ISC

无锡固电

N-CHANNEL 250V - 0.38ohm - 8A DPAK MESH OVERLAY??MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

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STMICROELECTRONICS

意法半导体

STD

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VCC

Flexible MPEG audio/video codec with DVD and DVB receiver capability

文件：108.15 Kbytes 页数：3 Pages

STMICROELECTRONICS

意法半导体

Flexible MPEG audio/video codec with DVD and DVB receiver capability

文件：108.15 Kbytes 页数：3 Pages

STMICROELECTRONICS

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丝印：DPAK；Package：TO-252；Isc N-Channel MOSFET Transistor

文件：295.7 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 100-V (D-S) MOSFET

文件：1.02055 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel MOSFET uses advanced trench technology

文件：1.25587 Mbytes 页数：4 Pages

DOINGTER

杜因特

N-channel 40 V, 5.5 m typ., 80 A STripFET VI DeepGATE Power MOSFET in DPAK

文件：1.43706 Mbytes 页数：18 Pages

STMICROELECTRONICS

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N-Channel MOSFET uses advanced SGT technology

文件：1.08523 Mbytes 页数：4 Pages

DOINGTER

杜因特