SCHOTTKY RECTIFIER

Features  150'C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technolo

文件：379.94 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STD83003 is exp

文件：299.48 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

丝印：D830CP20；Package：DIP-8；Complementary transistor pair in a single package

Features ■ Low VCE(sat) ■ Simplified circuit design ■ Reduced component count ■ Low spread of dynamic parameters Applications ■ Compact fluorescent lamp (CFL) 110 V mains Description The STD830CP20 is a hybrid complementary pair of power bipolar transistors manufactured by using the

文件：88.72 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

Complementary transistor pair in a single package

Description The STD830CP40 is a hybrid complementary pair of power bipolar transistors manufactured by using the high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. The STD830CP40 is housed in dual island DIP-8 package with separated terminals

文件：166.23 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-channel 30 V, 0.0042 廓 , 80 A, DPAK, TO-220, IPAK STripFET??V Power MOSFET

Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFETTM technology. The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. F

文件：376.17 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) =5.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.36 Kbytes 页数：2 Pages

ISC

无锡固电

SCHOTTKY RECTIFIER

Features  150 'C TJ operation  Center tap configuration  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability 

文件：379.88 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

High current, high performance, low voltage NPN transistors

Description The devices are manufactured in low voltage NPN planar technology with “base island” layout. the resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ DC current gain, hFE

文件：261.18 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：D878；Package：DPAK；High current, high performance, low voltage NPN transistors

Description The devices are manufactured in low voltage NPN planar technology with “base island” layout. the resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ DC current gain, hFE

文件：261.18 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

NPN Silicon Transistor

Description • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with STB772 • Switching Application Features • Low collector saturation voltage VCE(sat)=0.4V(Max.)

文件：236.29 Kbytes 页数：3 Pages

AUK