Description

The devices are manufactured in low voltage NPN planar technology with “base island” layout. the resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

Features

■ Very low collector to emitter saturation voltage

■ DC current gain, hFE >100

■ 5 A continuous collector current

Applications

■ Power management in portable equipment

■ Voltage regulation in bias supply circuits

■ Switching regulator in battery charger applications

■ Heavy load driver

STD878T4属于分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个。意法半导体（ST）集团制造生产的STD878T4晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。