丝印：13NM50N；Package：DPAK；N-channel 500 V, 0.285 Ω typ., 12 A MDmesh™ II Power MOSFET in a DPAK package

Features • 100 avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET as

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STMICROELECTRONICS

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N-channel 500 V, 0.28 Ohm typ., 12 A MDmesh II Power MOSFET in a DPAK package

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most • 100% avalanche tested\n• Low input capacitance and gate charge• Low gate input resistance;

ST

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N-channel 500 V - 0.250 廓 - 12 A MDmesh??II Power MOSFET TO-220 - TO-247 - TO-220FP - I2PAK - D2PAK

文件：573 Kbytes 页数：18 Pages

STMICROELECTRONICS

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N-channel 500V - 0.250廓 - 12A - TO-220/FP - TO-247-I2/D2PAK Second generation MDmesh??Power MOSFET

文件：622.4 Kbytes 页数：17 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.32Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.11 Kbytes 页数：2 Pages

ISC

无锡固电