Automotive-grade N-channel 500 V, 0.336 Ω typ., 10 A MDmesh™ M2 Power MOSFET in a DPAK package

Features  Designed for automotive applications and AEC-Q101 qualified  Extremely low gate charge  Excellent output capacitance (COSS) profile  100 avalanche tested  Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks t

文件：793.03 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

汽车级N沟道500 V、0.336 Ohm典型值、10 A MDmesh M2功率MOSFET，DPAK封装

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • AEC-Q101 qualified \n• Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

Automotive-grade N-channel 500 V, 0.336 Ω typ., 10 A MDmesh™ M2 Power MOSFET in a DPAK package

Features  Designed for automotive applications and AEC-Q101 qualified  Extremely low gate charge  Excellent output capacitance (COSS) profile  100 avalanche tested  Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks t

文件：793.03 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

ST/意法
TO-252

ST/意法

上传：深圳市天芯威科技有限公司

ST
TO-252

ST

上传：深圳市轩嘉盛电子有限公司