丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：324.56 Kbytes 页数：2 Pages

ISC

无锡固电

Excellent switching performance

文件：1.09292 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N沟道650 V、0.308 Ohm典型值、11 A MDmesh M5功率MOSFET，DPAK封装

These devices are N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and sup • Extremely low RDS(on) \n• Low gate charge and input capacitance \n• Excellent switching performance \n• 100% avalanche tested;

ST

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N-channel 650 V, 0.308 廓 typ., 11 A MDmesh??V Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages

文件：925.13 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：310.42 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.308 ohm typ., 11 A MDmesh V Power MOSFET

文件：925.13 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体