N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a DPAK package

This device is an N-channel Power MOSFET developed using MDmesh™ M2 EP enhanced performancetechnology. Thanks to its strip layout and an improved vertical structure, the device exhibitslow on-resistance, optimized switching characteristics with very low turn-off switchinglosses, rendering it suitabl • Extremely low gate charge\n• Excellent output capacitance (COSS) profile\n• Very low turn-off switching losses• 100% avalanche tested\n• Zener-protected;

ST

意法半导体

Extremely low gate charge

文件：501.71 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge

文件：502.49 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge

文件：502.49 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.389 廓 typ., 7 A MDmesh??M2 EP Power MOSFET in a PowerFLAT??5x6 HV package

文件：488.18 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体