N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a I2PAKFP package

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching loss, rendering them s Extremely low gate charge\nExcellent output capacitance (C\nOSS) profile\nVery low turn-off switching losses\n100% avalanche tested\nZener-protected;

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Extremely low gate charge

文件：502.49 Kbytes 页数：15 Pages

STMICROELECTRONICS

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N-channel 600 V, 0.389 廓 typ., 7 A MDmesh??M2 EP Power MOSFET in a PowerFLAT??5x6 HV package

文件：488.18 Kbytes 页数：16 Pages

STMICROELECTRONICS

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N-channel 600 V, 0.340 廓 typ., 11 A MDmesh??M2 EP Power MOSFET in a TO-220 package

文件：518.22 Kbytes 页数：14 Pages

STMICROELECTRONICS

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