N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a TO-220FP package

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it su • Extremely low gate charge\n• Excellent output capacitance (COSS) profile\n• Very low turn-off switching losses• 100% avalanche tested\n• Zener-protected;

ST

意法半导体

Extremely low gate charge

文件：502.49 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge

文件：502.49 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.389 廓 typ., 7 A MDmesh??M2 EP Power MOSFET in a PowerFLAT??5x6 HV package

文件：488.18 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.340 廓 typ., 11 A MDmesh??M2 EP Power MOSFET in a TO-220 package

文件：518.22 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体