丝印：AP15P10D；Package：TO-252；-100V P-Channel Enhancement Mode MOSFET

文件：1.34871 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

Very low on-resistance

文件：643.48 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

汽车级P沟道-60 V、0.13 Ohm典型值、-10 A STripFET F6功率MOSFET，DPAK封装

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. • Designed for automotive applications and AEC-Q101 qualified \n• Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

ST

意法半导体

ST/意法
TO-252

ST/意法

上传：深圳市天芯威科技有限公司

ST
TO-252

ST

上传：深圳市轩嘉盛电子有限公司