N-channel 500V - 0.29廓 - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh??Power MOSFET

Description This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mos

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STMICROELECTRONICS

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N-channel 500 V, 0.29 廓, 11 A MDmesh??II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP

文件：588.5 Kbytes 页数：19 Pages

STMICROELECTRONICS

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N-channel 500 V, 0.29 廓, 11 A, FDmesh??II Power MOSFET (with fast diode), D2PAK, DPAK

Description FDmesh™ technology combines the MDmesh™ features with an intrinsic fast-recovery body diode. The resulting product has reduced on resistance and fast switching commutations, making it especially suitable for bridge topologies where low trr is required. ■ 100 avalanche tested ■ Low i

文件：584.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

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N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP

文件：1.03153 Mbytes 页数：16 Pages

STMICROELECTRONICS

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丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：324.17 Kbytes 页数：2 Pages

ISC

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N-channel 500 V, 0.29 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in DPAK package

The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly The worldwide best R\nDS(on)* area amongst the fast recovery diode devices\nLow input capacitance and gate charge\n100% avalanche tested\nExtremely high dv/dt and avalanche capabilities\nLow gate input resistance;

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