NPN RF silicon transistor

Description The START499D provide the market with a Si state-of-art RF process. Manufactured with ST 3rd generation bipolar process, it offers the highest power, gain and efficiency in SOT-89 for given breakdown voltage (BVCEo). START499D is suitable for a wide range of application up to 1 GHz.

文件：238.53 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

NPN RF silicon transistor

ST

意法半导体

Package：TO-243AA；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 4.5V SOT89

STMICROELECTRONICS

意法半导体

NPN RF silicon transistor

Description START499ETR is a product of the START family that provide the market with a Si state-of-art RF process. Manufactured in ST 3rd generation bipolar process, it offers the highest power, gain and efficiency in SOT-343 for given breakdown voltage (BVceo). Suitable for a wide range of appl

文件：244.5 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

NPN Silicon RF Transistor

DESCRIPTION START499 is a product of the START family that provide the market with a Si state-of-art RF process. Manufactured in St 3rd generation bipolar process, it offers the highest power, gain and efficiency in SOT343 for given breakdown voltage (BVceo). Suitable for a wide range of applicat

文件：70.31 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

Epitaxial Planar PNP Transistor

文件：46.93 Kbytes 页数：3 Pages

AUK