丝印：100N10F7；Package：D2PAK；N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trenc

文件：652.33 Kbytes 页数：28 Pages

STMICROELECTRONICS

意法半导体

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

文件：315.65 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 100 V, 0.0068 廓 typ., 80 A, STripFET??VII DeepGATE??Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220

文件：1.6682 Mbytes 页数：23 Pages

STMICROELECTRONICS

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N沟道100 V、0.0068 Ohm典型值、80 A STripFET F7功率MOSFET，D2PAK封装

该N-沟道功率MOSFET利用STripFET™F7技术和增强型沟槽栅极结构，可降低通态电阻，同时降低内部电容和栅极电荷，从而使开关速度更快、能效更高。 • 处于市面上最低的 RDS(on) 行列 \n• 出色的品质因数（FoM） \n• 较低的Crss/Ciss 比值使得其具有更强的抗EMI能力 \n• 坚固的抗雪崩能力;

ST

意法半导体

N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trenc

文件：652.33 Kbytes 页数：28 Pages

STMICROELECTRONICS

意法半导体

N-Channel Power MOSFET

Application « Motor control and drives « Load switch « Power management « PWM Application

文件：2.87513 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子