丝印：100N10F7；Package：D2PAK；N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trenc

文件：652.33 Kbytes 页数：28 Pages

STMICROELECTRONICS

意法半导体

丝印：100N10F7；Package：DPAK；N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trenc

文件：652.33 Kbytes 页数：28 Pages

STMICROELECTRONICS

意法半导体

丝印：100N10F7；Package：TO-220FP；N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trenc

文件：652.33 Kbytes 页数：28 Pages

STMICROELECTRONICS

意法半导体

丝印：100N10F7；Package：I2PAK；N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trenc

文件：652.33 Kbytes 页数：28 Pages

STMICROELECTRONICS

意法半导体

丝印：100N10F7；Package：TO-220；N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trenc

文件：652.33 Kbytes 页数：28 Pages

STMICROELECTRONICS

意法半导体

丝印：100N10F7；Package：PowerFLAT；N-channel 100 V, 0.0062 廓 typ., 19 A, STripFET??VII DeepGATE?? Power MOSFET in a PowerFLAT??5x6 package

文件：1.40189 Mbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体