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STB100N10F7

Marking:100N10F7;Package:D2PAK;N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features •AmongthelowestRDS(on)onthemarket •ExcellentFoM(figureofmerit) •LowCrss/CissratioforEMIimmunity •Highavalancheruggedness Applications •Switchingapplications Description TheseN-channelPowerMOSFETsutilizeSTripFET™F7technologywithan enhancedtrenc

STMICROELECTRONICSSTMicroelectronics

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STD100N10F7

Marking:100N10F7;Package:DPAK;N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features •AmongthelowestRDS(on)onthemarket •ExcellentFoM(figureofmerit) •LowCrss/CissratioforEMIimmunity •Highavalancheruggedness Applications •Switchingapplications Description TheseN-channelPowerMOSFETsutilizeSTripFET™F7technologywithan enhancedtrenc

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STF100N10F7

Marking:100N10F7;Package:TO-220FP;N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features •AmongthelowestRDS(on)onthemarket •ExcellentFoM(figureofmerit) •LowCrss/CissratioforEMIimmunity •Highavalancheruggedness Applications •Switchingapplications Description TheseN-channelPowerMOSFETsutilizeSTripFET™F7technologywithan enhancedtrenc

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STI100N10F7

Marking:100N10F7;Package:I2PAK;N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features •AmongthelowestRDS(on)onthemarket •ExcellentFoM(figureofmerit) •LowCrss/CissratioforEMIimmunity •Highavalancheruggedness Applications •Switchingapplications Description TheseN-channelPowerMOSFETsutilizeSTripFET™F7technologywithan enhancedtrenc

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP100N10F7

Marking:100N10F7;Package:TO-220;N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features •AmongthelowestRDS(on)onthemarket •ExcellentFoM(figureofmerit) •LowCrss/CissratioforEMIimmunity •Highavalancheruggedness Applications •Switchingapplications Description TheseN-channelPowerMOSFETsutilizeSTripFET™F7technologywithan enhancedtrenc

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STL100N10F7

Marking:100N10F7;Package:PowerFLAT;N-channel 100 V, 0.0062 廓 typ., 19 A, STripFET??VII DeepGATE?? Power MOSFET in a PowerFLAT??5x6 package

STMICROELECTRONICSSTMicroelectronics

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