LD56100DPU30R

Marking：S30；1 A very low dropout fast transient ultra-low noise linear regulator

Description TheLD56100highaccuracyvoltageregulatorprovides1Aofcurrentfromaninput voltagerangingfrom1.8Vto5.5V,withatypicaldropoutvoltageof120mV. ItisavailableinDFN8(1.2x1.6mm)package,allowingthemaximumspacesaving. Thedeviceisstabilizedwithacerami

BTS3011TE

Marking：S3011TE；Package：PG-TO252-5；Smart Low-Side Power Switch

Features •Singlechanneldevice •DigitalFeedback •Currentlimitationtriggerconcept •3.3and5Vcompatiblelogicinputs •Electrostaticdischargeprotection(ESD) •GreenProduct(RoHScompliant) •AECQualified

BTS3050EJ

Marking：S3050EJ；Package：PG-TDSO8-31；Smart Low-Side Power Switch

BasicFeatures •Singlechanneldevice •VerylowoutputleakagecurrentinOFFstate •Electrostaticdischargeprotection(ESD) •Embeddedprotectionfunctions(seebelow) •ELVcompliantpackage •GreenProduct(RoHScompliant) •AECQualified

PBSS301NZ

Marking：S301NZ；Package：SC-73；12 V, 5.8 A NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PBSS301PZ

Marking：S301PZ；Package：SC-73；12 V, 5.7 A PNP low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PBSS302NZ

Marking：S302NZ；Package：SC-73；20 V, 5.8 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS302PZ 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorcur

PBSS302NZ-Q

Marking：S302NZ；Package：SC-73；20 V, 5.8 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorcurrentgain(hFE)athighIC

PBSS302PZ

Marking：S302PZ；Package：SC-73；20 V, 5.5 A PNP low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PBSS302PZ-Q

Marking：S302PZ；Package：SOT223；20 V, 5.5 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS302NZ-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorc

PBSS303NZ

Marking：S303NZ；Package：SC-73；30 V, 5.5 A NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors