PBSS301NZ

Marking：S301NZ；Package：SC-73；12 V, 5.8 A NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PBSS301NZ,135

Package：TO-261-4，TO-261AA；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 12V 5.8A SOT223

Nexperia USA Inc.

PBSS301PD

20V,4APNPlowVCEsat(BISS)transistor

1.1Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT457(SC-74) Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS301ND. 1.2Features *Verylowcollector-emittersaturationresistance *Ultralowcollector-emittersaturationvoltag

PBSS301PX

12V,5.3APNPlowVCEsat(BISS)transistor

1.1Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT89 (SC-62/TO-243)smallandflatleadSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS301NX. 1.2Features ..Lowcollector-emittersaturationvoltageVCEsat ..Highcollectorcur

PBSS301PZ

12V,5.7APNPlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PBY301

Silicon-PowerRectifiers

Silicon-PowerRectifiers •Nominalcurrent35A •Repetitivepeakreversevoltage50~1000V •MetalcaseDO-5 •Weightapprox.6g •Standardpolarity:Cathodetostud •IndexR:Anodetostud •Standardpackaging:bulk

PBY301

Silicon-Power-Rectifiers

PC301

LightingConnector1Pole

PC301-O

PRODUCTSPECIFICATION

PCS-301

ProgrammableResistance-Capacitance-Inductance-RTDDecadeSubstituter

Features: AllSubstuters •Manualcontrolviathumbwheelswitches standard •OponalRS-232,EthernetorIEEE-488 Interfaces •1to10Decades •Benchtoporrackmountversions •Singleordual(twosubstutersinone chassis)versions •Builttoordersocompletelyconfigurable at