12 V, 5.8 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS301PZ. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC an

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恩XP

丝印：S301NZ；Package：SC-73；12 V, 5.8 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：286.12 Kbytes 页数：15 Pages

NEXPERIA

安世

12 V, 5.8 A NPN low VCEsat (BISS) transistor

General description\nNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.\nPNP complement: PBSS301PZ. ■ Low collector-emitter saturation voltage VCEsat\n■ High collector current capability IC and ICM\n■ High collector current gain (hFE) at high IC\n■ High efficiency due to less heat generation\n■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistorsApplications\n■ DC-to;

恩XP

12 V, 5.8 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS301PZ. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• AEC-Q101 qualifie;

Nexperia

安世

Package：TO-261-4，TO-261AA；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 12V 5.8A SOT223

Nexperia USA Inc.