S305PZ

型号：PBSS305PZ-Q；Package：SOT223；80 V, 4.5 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS305NZ-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorc

S306NZ

型号：PBSS306NZ；Package：SC-73；100 V, 5.1 A NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

S306NZ

型号：PBSS306NZ-Q；Package：SOT223；100 V, 5.1 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS306PZ-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorc

S306PZ

型号：PBSS306PZ；Package：SC-73；100 V, 4.1 A PNP low VCEsat (BISS) transistor

Featuresandbenefits Lowcollector-emittersaturation voltageVCEsat Highcollectorcurrentcapability ICandICM Highcollectorcurrentgain(hFE)at highIC Highefficiencyduetolessheat generation SmallerPrinted-CircuitBoard(PCB) areathanforconventionaltransistors

S306PZ

型号：PBSS306PZ-Q；Package：SC-73；100 V, 4.1 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS306NZ-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorc

S30H120H

型号：TRS30H120H；Package：TO-247-2L；SiC Schottky Barrier Diode

Applications •PowerFactorCorrection •SolarInverters •UninterruptiblePowerSupplies •DC-DCConverters Features (1)Chipdesignof3rdgeneration (2)Lowforwardvoltage:VF=1.27V(typ.) (3)Lowtotalcapacitivecharge:Qc=162nC(typ.) (4)Lowreversecurrent:IR=2.8μA(ty

S30N120HB

型号：TRS30N120HB；Package：TO-247；SiC Schottky Barrier Diode

Applications •PowerFactorCorrection •SolarInverters •UninterruptiblePowerSupplies •DC-DCConverters Features (1)Chipdesignof3rdgeneration (2)Lowforwardvoltage:VF(PerLeg)=1.27V(typ.) (3)Lowtotalcapacitivecharge:Qc(PerLeg)=80nC(typ.) (4)Lowreversecurre

S3035EJ

型号：BTS3035EJ；Package：PG-TDSO8-31；Smart Low-Side Power Switch

S3080EJ

型号：BTS3080EJ；Package：PG-TDSO8-31；Smart Low-Side Power Switch

S3011TE

型号：HITFET-BTS3011TE；Package：PG-TO252-5；Smart Low-Side Power Switch