丝印：S301PZ；Package：SC-73；12 V, 5.7 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：285.22 Kbytes 页数：15 Pages

NEXPERIA

安世

12 V, 5.7 A PNP low VCEsat (BISS) transistor

文件：171.74 Kbytes 页数：14 Pages

恩XP

12 V, 5.7 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS301NZ. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• AEC-Q101 qualifie;

Nexperia

安世

12 V, 5.7 A PNP low VCEsat (BISS) transistor

恩XP

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 12V 5.7A SOT223

Nexperia USA Inc.